vishay il766/ ILD766 document number 83643 rev. 1.3, 22-apr-04 vishay semiconductors www.vishay.com 1 i179039 e c c e 1 2 3 4 8 7 6 5 b c e nc a/c c/a 1 2 3 6 5 4 c/a a/c c/a a/c optocoupler, photodarlington output, ac input, internal r be features ? internal r be for better stability bv ceo > 60 v ac or polarity insensitive inputs built-in reverse polarity input protection industry standard dip package agency approvals ul - file no. e52744 system code h or j csa 93751 bsi iec60950 iec60965 applications designed for applications requiring detection or mon- itoring of ac signals. description the il766/ ILD766 are bidirectional input optically coupled isolators. they consist of two gallium ars- enide infrared emitting diodes coupled to a silicon npn photodarlington per channel. the il766 is single channel optocouplers. the ILD766 has two isolated channels in a single dip package. order information for additional information on the available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause per manent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input each channel part remarks ILD766-1 ctr > 500 @ i f = 2.0 ma, dip-8 ILD766-2 ctr > 500 @ i f = 1.0 ma, dip-8 il766-1 ctr > 500 @ i f = 2.0 ma, dip-6 il766-2 ctr > 500 @ i f = 1.0 ma, dip-6 il766-1-x007 ctr > 500 @ i f = 2.0 ma, smd-6 (option 7) parameter test condition symbol value unit forward continuous current i f 60 ma power dissipation, single channel p diss 200 mw power dissipation, dual channel p diss 90 mw derate linearly from 25 c, single channel 2.6 mw/c derate linearly from 25 c, dual channel 1.2 mw/c
www.vishay.com 2 document number 83643 rev. 1.3, 22-apr-04 vishay il766/ ILD766 vishay semiconductors output each channel coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 60 v collector-base breakdown voltage bv cbo 70 v power dissipation p diss 100 mw derate linearly from 25 c 1.33 mw/c parameter test condition symbol value unit isolation test voltage t = 1.0 sec. v iso 5300 v rms isolation resistance t amb = 25 c r io 10 12 ? t amb = 100 c r io 10 11 ? total power dissipation (led plus detector), single channel p tot 250 mw total power dissipation (led plus detector), dual channel p tot 400 mw derate linearly from 25 c, single channel 3.3 mw/c derate linearly from 25 c, dual channel 5.3 mw/c creepage 7.0 mm clearance 7.0 mm comparative tracking index per din iec 112/vde0303, part 1 175 storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to +100 c lead soldering time at 260 c t sld 10 sec. parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.2 1.5 v parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 1.0 ma bv ceo 60 75 v collector-base breakdown voltage i c = 10 abv cbo 60 90 v collector-emitter leakage current v ce = 10 v i ceo 10 100 na parameter test condition symbol min ty p. max unit saturation voltage, collector-emitter i f = 10 ma, i c = 10 ma v cesat 1.0 v
vishay il766/ ILD766 document number 83643 rev. 1.3, 22-apr-04 vishay semiconductors www.vishay.com 3 current transfer ratio switching characteristics typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit dc current transfer ratio v ce = 5.0 v, i f = 2.0 ma, ctr dc 500 % parameter test condition symbol min ty p. max unit rise time, fall time v cc = 10 v, i f = 2.0 ma, r l = 100 ? t r , t f 100 s fig. 1 input characteristics fig. 2 transistor current vs. voltage iil766_01 input voltage - v f (v) input current - i f (ma) 60 40 20 0 -20 -40 -60 -2.0 -1.0 0 1.0 2.0 il766_02 i c collector current (ma) collector voltage (v) 0 10 2030 40 50607080 90100 100 90 80 70 60 50 40 30 20 10 0 iil766_02 fig. 3 transistor output current vs. voltage fig. 4 i ceo at v ce = 10 v vs. temperature iil766_03 i c collector current (ma) v ce collector voltage (v) iil766_03 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 200 180 160 140 120 100 80 60 40 20 0 l766_04 temperature (c) i d dark current (na) 0 25 50 75 100 125 4 3 2 10 10 10 10 1 1 iil766_04
www.vishay.com 4 document number 83643 rev. 1.3, 22-apr-04 vishay il766/ ILD766 vishay semiconductors fig. 5 normalized ctr vs. forward current fig. 6 t r vs. forward current fig. 7 saturated switching characteristics measurements- schematic and waveform iil766_05 nctrce - normalized ctr .1 1 10 100 10 1 .1 .01 i f - led current - ma v ce =1v v ce =5v normalized @ i f =10ma t a = 25c iil766_06 trise ( s) 1 30 20 10 .0 i f - led current - ma r l =1k r l =10k 10 iil766_07 i f t r v o t d t s t f t phl t plh v th =1.5 v v o r l v cc =10 v f=10 khz, df=50% i f =2 ma fig. 8 t fall vs. forward current fig. 9 t on vs. forward current fig. 10 t off vs. forward current iil766_08 tfall ( s) 110 600 500 400 300 200 100 0 i f - led current - ma r l =1k r l = 10k iil766_09 tphl ( s) 110 20 10 0 i f - led current - ma r l =1k r l = 10k iil766_10 toff ( s) 110 700 600 500 400 300 200 100 0 i f - led current - ma r l =1k r l = 10k
vishay il766/ ILD766 document number 83643 rev. 1.3, 22-apr-04 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) fig. 11 t phl vs. forward current iil766_11 ton ( s) 110 30 20 10 0 i f - led current - ma r l =1k r l = 10k fig. 12 t plh vs. forward current iil766_12 tplh ( s) 110 400 300 200 100 0 i f - led current - ma r l = 10k r l =1k i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3?9 .300?.347 (7.62?8.81) 4 typ. iso method a
www.vishay.com 6 document number 83643 rev. 1.3, 22-apr-04 vishay il766/ ILD766 vishay semiconductors package dimensions in inches (mm) i178006 pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3?9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 iso method a .315 (8.0) min. .255 (6.5) .248 (6.3) .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18447
vishay il766/ ILD766 document number 83643 rev. 1.3, 22-apr-04 vishay semiconductors www.vishay.com 7 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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